• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low • • • • • • • • • •.

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 2.

IXFH60N20

IXFH60N20F

IXFH60N25Q

IXFH60N50P3

IXFH60N60X

IXFH60N65X2

IXFH66N20Q

IXFH67N10

IXFH69N30P

IXFH6N100

IXFH6N100F

IXFH6N120P

IXFH6N90